try a HMDS treatment before spin coating the resist, it will improve the
resist adhesion on the silicon dioxide surface..


On Thu, Aug 13, 2009 at 4:39 PM, renil kumar wrote:

> Hi all,
>               I have <110> oriented Si wafer deposited with 1 um of SiO2.
> over which I have to transfer a pattern, for that first i cleaned the wafers
> with acetone and IPA and then nitrogen blown for drying it. then I spin
> coated the wafer with PR AZ5214E of thickness 1.3 um, bake it for 1 minute
> at 95 degrees. Then i write the pattern directly using Laser writer and
> developed the PR using MF26A developer solution. then i dipped the wafer in
> DI water and i observed that the entire PR is peeled off the wafer. I tried
> the same for two such samples but the problem persisted. Anybody knows how
> it happens and how to get rid off this mess, anything regarding this will be
> highly appreciated, thanking you
>
> Renil