Hi Vijay,

100 microns down on silicon layer is relatively a long etch. I earlier tried
etching 120 microns through silicon layer. I used a skin layer of nitride
over which a thick (about 10 microns) hard baked patterned photoresist mask
was used. You may try using TI-Series photoresist from microchemicals which
I used previously. Hope this information helps.

- Prasanna




On Tue, Oct 13, 2009 at 3:25 PM, Vijay Rajaraman - EWI <
V.Rajaraman@tudelft.nl> wrote:

> Hi All,
>
> I want to etch 100 microns of Si using Bosch DRIE and I'm unable to use
> some well known masking materials such as SiO2/ Al/Al2O3 for specific
> reasons.
>
> So has anyone tried some other masking material than the above with
> reasonable selectivity? For instance, I could think of a spin-on
> material such as resist or SOG ?
>
> Please share your experiences, either in the forum or in person (by
> e-mail). Any tip(s)/suggestion(s) are appreciated.
>
> Thanks,
> Vijay

--
Thanks & Regards,
Prasanna Srinivasan