Hi everyone,

I plan to make some SOI wafer,
1  A wafer, oxide 1.5μm
2  Two wafers, direct bonding
3  Anneal to release the stress between the oxide layer and structure layer
  (1100 degree celsius, 2 hours)
4  CMP, the thickness of structure layer  ~50μm

In previous work, I only got some Si-Si direct bonding experience, but without
gauging stess. I have some questions:

1) Is  2-hour time long enough to release the stress for the 50μm structure
layer and 1.5μm oxide layer?
2)  Please show me the matters that i should pay attention to but I've missed.


Any suggestions are appreciated.

Thanks a lot.

--
Yan Xin
-Pen-Tung Sah Micro-Nano Technology Research Center,
-Xiamen University, CHINA
HOME:
http://memsc.xmu.edu.cn/mems_renchaiduiwu/XuYuan_Chen-Group/index_1.html