You will have a problem with current spreading, you would need the
Silicon surface to be <1 ohm/square and have your electrical contacts
evenly spread out around the perimeter of the wafer. If you use a point
contact to attach your wafer the power supply then the current will not
spread even and your uniformity will be terrible.

If the resistance of the Silicon is to high then you will not have
enough voltage to get the correct current and if the voltage gets to
high then you will burn the deposit.

Rick


-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org] On Behalf Of lin yu
Sent: Wednesday, October 14, 2009 10:49 AM
To: General MEMS discussion
Subject: Re: [mems-talk] Electroplating question

Rick,

If I deposit a thin layer of metal on high doped Si (but the metals
are not connected together),
can I use Si as the conductive layer for electroplating?  Will this
work?

Thanks,
Lin