That would be somewhat challenging to achieve. The surface roughness
achievable by DRIE is rather coarse when comapred with wet etch processes.
What is your etch depth? You may try surface profiling by a quick HF dip if
you have a patterned mask but you will end up with undercut.

- Prasanna

On Thu, Nov 5, 2009 at 11:36 AM, Miyakawa, Natsuki <
Natsuki.Miyakawa@eads.net> wrote:

> Dear all,
>
> After DRIE-etiching of silicon I found that the bottom surface of the
> etched area was quite rough (roughness >30nm for etching depth 70µm,
> roughness increases with increasing etching depth) . Is there any method to
> make the surface smooth (<10nm)?
>
> Thanks!
>
> Regards
>
> Natsuki

--
Thanks & Regards,
Prasanna Srinivasan