Xiaoyong -

I haven't done this myself for this application, but have you considered
using a bilayer resist with a lift-off resist (LOR) to do this?  I use
LOR to lift off quite thick metal layers (eg, 200 nm Au) on top of PR,
and the entire gold layer lifts off easily in hot NMP as a single,
intact sheet.  This should work fine for a membrane, I think - no
mechanical agitation needed.

Aaron

Xiaoyong Liu wrote:
> Hi,
>     I am trying to deposit metal on SiN membrane windows after lithography and
want to perform liftoff. But seems it is very hard to remove resist enen
overnight soaking in PG remover. Since membrane is only around 50 nm thick, and
I can't not use ultrasonic bath because it will break membrane.  I even have
trouble in using N2 blow to dry membrane wafers. Does anyone have any experience
how to do it on membrane?
>
> Thanks
>
> Xiaoyong
>
>

--
Dr. Aaron Datesman
Post-Doctoral Research Associate
Materials Science Division
Argonne National Laboratory
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