Hello,

You' right. After an additional etching step of app. 60 min in H3PO4 followed by
oxidation hardly any
problems were observed. This means a total etching time of app 330min in H3PO4
at 140°C for a 200nm thin
low stress SiN layer!

regards,

Peter Kuijpers
MiPlaza Technology Laboratories
Philips Research Europe
High Tech Campus 04
Postbox HTC-4-1
5656 AE Eindhoven
The Netherlands
Tel.: +31 402743667
         +31 612507027
Email: p.e.m.kuijpers@philips.com


-----Original Message-----
From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On
Behalf Of xudehui0108
Sent: Tuesday 22 December 2009 8:55
To: General MEMS discussion
Subject: Re: [mems-talk] Oxidation of KOH etched Si wafers

Kuijpers

    It is possible that the low stress SiN layer was not entirely removed by
H3PO4 etching. Even with the plasma, we find the low stress SiN is still
difficult to etch. If it is possible, you can try ion beam mill?

Regards!

2009-12-22

xudehui0108