Hello Terry,

As much as I would like to, it is impossible to give a specific recipe because
there are so many variables.  For example, the tool used is critical because it
defines fixed parameters, and so is the type of vacuum system which determines
the residence time of the gas species.  On the other side of the coin, the shape
of the sidewall is a function of the etch parameters and the type of etch mask
used.  There are so many variables to consider, it is critical to do an
extensive DOE matrix to figure out what is best for a certain application.  If
you contact me with more details regarding your tool and what you are trying to
achieve, I'll try to help with some general guidelines.

Brad Cantos
brad.cantos@holage.com
http://holage.com


On Jan 11, 2010, at 3:54 PM, Te LI wrote:

> Hi Brad,
>
> I am also interested in the ICP recipe of etching GaAs with Cl-based. Would
you please tell me more detail about the recipe, such as the amount of the
gases, ICP power, RF power, et al..
> Thank you very much.
>
> Regards,
> Terry