My receipe is using CF4 only, and the ICP power is as high as 3000 W. Maybe
this is the problem. I will try to find recipes with low power or SF6. Do
you know any suitable recipe with good etch rate?

Thank you

2010/2/8 Bob Henderson 

> What is your receipe. A lot of times using SF6 at low power will have a
> good
> etch rate and be gentler on the resist. Bob Henderson
>
> -----Original Message-----
> From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org]
> On Behalf Of weiquan yang
> Sent: Monday, February 08, 2010 9:27 AM
> To: mems-talk@memsnet.org
>  Subject: [mems-talk] SiO2 RIE etching without carbonizing the photoresist
>
> Hi, everyone. I am trying to etch SiO2 layer by RIE dry etching using
> photoresist (s1827) as the etching mask. Because the SiO2 layer is as thick
> as 1 um, I need to do the RIE dry etching for long time. However when I
> extend the etching time more than 15 mins, the photoresist becomes
> carbonized. Carbonzied photoresist is hard to remove without attacking the
> GaAs device under the SiO2. Are there other SiO2 etching recipes
> without carbonizing the photoresist? Or are there some way to strip the
> carbonized photoresist without destroying the device? Thank you!
>
> Weiquan