Hello Gonca,

Step 2  use ramp 500rpm from 0 to 1000
Step 4 soft bake at oven, not at hot plate for 3 mins
Step 10 developer : DI ratio (1:3)

Additionally Cr sputter cause problem for the lift of, it is ideal for etching.

Kind Regards,

Mamun Rashid
Research Assistant
Centre for Nano & Microsystems
University of Teesside
TS1 3BA. U.K
+44(0)164 234 2428


-----Original Message-----
From: mems-talk-bounces+m.rashid=tees.ac.uk@memsnet.org [mailto:mems-talk-
bounces+m.rashid=tees.ac.uk@memsnet.org] On Behalf Of Gonca ARAS
Sent: 15 May 2010 22:58
To: mems-talk@memsnet.org
Subject: [mems-talk] liftoff with AZ5214





Hi all,

I want to make lift off by using positive resist AZ5214.

My problem is the defects at the edge of my figure (from 1 um width to 10 um
width) after the liftoff process.

My recipe:
1. step cleaning and dehydration bake
2. step 4000 rpm 40 sec HMDS
3. step 4000 rpm 40 sec AZ5214
4. step soft bake 110 oC 55 sec
5. step exposure 5mW 75 sec (soda lime mask,Karl Süss MJB3)
6. step 10 min chlorobenzene soak
7. step blow off  chlorobenzene with N2
8. step develop AZ 400K:DI=1:4 70 sec ,rinse with DI, blow dry with N2
9. step Cr sputter 100 nm (hard mask during the reactive ion etcing process)
10. step lift off ultrasonic bath

best regards

Gonca Aras
goncaras@gmail.com