Hi Alaa,

Those sound like good parameters. Maybe you could try bonding a pyrex
wafer to a plain Si wafer. If that works then you know there's something
up with your amorphous Si layer. I've done glass to glass anodic bonding
with 100 nm of evaporated silicon and it worked fine. It was a while
ago, but I believe I was in the 350-400C range and I only needed a
couple hundred volts. It's possible that your voltage is too high.

good luck!
Joe Grogan

On 5/18/2010 11:06 AM, A.ALLOUCH wrote:
> Hi,
>
> I am trying to bond a pyrex wafer to another 4 inch pyrex wafer by
> anodic bonding.  For that I use an amorphous silicon deposited by
> PECVD as intermediate layer (less than 1 µm thickness) or polysilicon
> deposited by LPCVD.  The parameters which I use are: 450°C on both
> wafers, 1200 V and 200N, but in both case I don't have a good bonding.
> if you have any suggestions, they will be welcome.
>
> best,
>
> Alaa
>

--
Joseph M. Grogan
Doctoral Candidate
Department of Mechanical Engineering and Applied Mechanics
University of Pennsylvania
220 South 33rd street
Room 229, Towne Building
Philadelphia, PA 19104
Lab Phone: 215-898-1380