You may also want to check whether your surface has a thin layer of
native oxide.

Jie

On Mon, Jun 7, 2010 at 7:12 PM, l j  wrote:
> Hello all,
>
> I see great variablity in etch rate of silicon with RIE CF4:O2 etch.
>
> At one point I see etch rate of >1um/min, at other <0.1um/min. This is at same
proces parameter setting (1:12 O2:CF4 ratio, 0.2T, 500W).
>
> Can anyone comment on what might casue such wide variability in etch rate at
nominally constant process parameters?
>
> Thanks in advance,
> K.C.
>

*  Zou Jie (Jay)
*  Department of Physics
*  University of Florida
*  Tel: +1-352-846-8018
*  Email: zoujiepku@gmail.com
*  Homepage: http://plaza.ufl.edu/zoujie/