Hello Muhammad

I don't think XeF2 should have any attack on AlGaN-GaN. So this would be a good
choice.  If you do not have access to an XeF2 etcher please contact me and we
can try it for you on one of our demo systems.

Best Regards
David

David Springer
XACTIX, Inc.
2403 Sidney St.
Suite 300
Pittsburgh, PA 15203
Tel: 412 381 3195
Fax: 412 381 1136
Mobile: 412 656 3573

> Sample: 2.2um AlGaN-GaN on 500um Si substrate.
Process steps done: In selected areas AlGaN-GaN is etched down to Si.
Target: Etch Si further down.

I don't use RIE for Si etch, because I suspect the physical bombardment of
plasma may
damage the top 17nm AlGaN.

Possible solution:  XeF2 isotropic Si etch because its only chemical process
without any RF

QUESTION: Does XeF2 attack AlGaN-GaN ?


Muhammad Qazi
Dept. of EE
University of South Carolina
Columbia, SC29208