Thanks for the response Roger. I've tried a few mixtures of just SF6/O2 and
haven't gotten any good results yet. I've read papers showing good results
with SF6/CHF3/O2, the only problem I have is that our system is set up with
both SF6 and CHF3 on the same MFC so I'm not sure how I could control the
relative flow rates of the two gases.

Nate

On Mon, Aug 23, 2010 at 1:19 PM, Roger Shile  wrote:

> With the selection of gases you have available there may be several
> options.  A vertical profile in Si should be possible with SF6 and O2.
> You might start with a 1:1 mixture.  You can then smooth the etched
> surfaces with the addition of CHF3.
>
> Look for papers on The Black Silicon Method by Henri Janson, e.g. J.
> Micromech. Microeng. 5 (1995) 115-120.
>
> Roger Shile

--
Nate Lawrence
PhD Candidate
Department of Electrical and Computer Engineering,
Boston University