Hello,

Most of the recombinations in semiconductors are defects based or traps based,
as
you like to put it, so the annealing step after implantation is very important.
I guess it is the single most important factor to prevent tunnenling and surface
recombinations. So try to optimize your annealing step.

I hope this helps.
nimo




________________________________
From: dai truong 
To: General MEMS discussion 
Sent: Mon, August 30, 2010 4:04:26 PM
Subject: [mems-talk] Surface traps

Hi all,

How do you reduce the surface traps in GaAs/AlGaAs MISFET?

Before and after insulator deposition (I use polyimide SU-8 2000.5), do I have
to do any cleaning process?  I only use ACE to clean wafers.

Thanks in advance.