Hi Guys,

I am trying to sputter deposit Ni on Si followed by annealing at a different
temperature (350, 450 degreesC). The nickel is 30nm and 200nm.
During annealing, the Ni film peals off, it should be due to thermal
stresses during deposition.

Any clue how this can be resolved ?

kind regards

Salam R. Gabran, MASc.
Research associate, PhD. Candidate
Center for Integrated RF Engineering
(CIRFE) Group
ECE Dept., University of Waterloo