Hi everyone,

What's the effect of AZ5214E to the 400degreeC anodic bonding process?

Here is the process flow:

1 DRIE Si with a  ...(...2um gap-2um line-2um gap-2um line...)  ..structure,
this area  is about 200um long*30um width*50um depth.

2 Thermal oxidation for 2um oxide layer (wet oxidation for about 10 hours)

3 spin the photoresist  AZ5214E as positive tone for thickness of 1.5um,
then Photolith.   the  2um gap-2um line area is protected by the photoresis.


note: in this step,  AZ5214E will leak in to the trench in the 2um gap-2um
line area. the resist  could stay in the trench til the next step. and the
top edge of trench could exposure to the BOE solution,

*Question 1: how badly the BOE will attack the lateral oxide layer side of
the trenches of in the 2um gap-2um line area ?*

4 BOE etch oxide layer away of the other area except the 2um gap-2um line
area

5 etch 7740 for  a cavity.

6 allign the cavity to the 2um gap-2um line area and perform the anodic
bonding process under the temperature about 400 degreeC.

*Question2: What's the effect of  residual AZ5214E in the trench to the
400degreeC anodic bonding process? *

any suggestions will be appreciated.

Best Regards,

Yan Xin
-Pen-Tung Sah MEMS Research Center,
-Xiamen University, CHINA
XMU HOME:
http://memsc.xmu.edu.cn/mems_renchaiduiwu/XuYuan_Chen-Group/index_1.html