100nF? Are you sure? That sounds excessive. Could you give us some fabrication details? Also, how exactly did you measure this capacitance? m On 12/22/10, Christian Engelwrote: > Hello everybody, > > I have build a square inductor with a size of about 1cm² with N=10. > Substrate is LCP with a structured Au-layer thereupon. This layer was > reinforced galvanically. The subsequent ohmic resistance of the inductance > is about 8...10Ohm. A very bad value I think and it shows, that the > metallization process doesn't work properly. However, the measured > inductivity complies with the expected value. The problem is, that I obtain > a very high parasitic capacitance (some 100 nF) that can be measured between > the two electrodes of the inductor. So it is impossible to use it any > further. > > Is it conceivable that the ohmic resistance generates potential-differences > between the windings of the inductor and a lot of parallel capacitances are > formed? Does anybody know an analytical description for this effect? > > Thanks a lot, > > Chris > _______________________________________________ > Hosted by the MEMS and Nanotechnology Exchange, the country's leading > provider of MEMS and Nanotechnology design and fabrication services. > Visit us at http://www.mems-exchange.org > > Want to advertise to this community? See http://www.memsnet.org > > To unsubscribe: > http://mail.mems-exchange.org/mailman/listinfo/mems-talk >