Cr-doped IO samples have been grown in-house on p-Si(100) by using
RF-DC sputtering deposition method. The RF is used for IO target
(125-250w) and DC for Cr-target ( 7-15W). The argon flow is kept at
24 mTorr.

Recently, SEM-analysis shows the samples are oxygen rich (80 %), we
have been advised to buy a new target and to use a heater to keep the
substrate at certain temperature in one side and in the other side to
descend the percentage of oxygen. Yet, we are still getting a very
high atomic percentage of oxygen.

Any suggestion, idea will be great.

thanks,
Yassine,Ait El Aoud
UML,MA