Yassine,

Make sure to pump the system to e-7 before introducing the ar. Also, try to
sputter cr onto a shutter befor coating your sample.

Shay


On Jan 26, 2011, at 12:57 PM, Yassine AEA  wrote:

> Cr-doped IO samples have been grown in-house on p-Si(100) by using
> RF-DC sputtering deposition method. The RF is used for IO target
> (125-250w) and DC for Cr-target ( 7-15W). The argon flow is kept at
> 24 mTorr.
>
> Recently, SEM-analysis shows the samples are oxygen rich (80 %), we
> have been advised to buy a new target and to use a heater to keep the
> substrate at certain temperature in one side and in the other side to
> descend the percentage of oxygen. Yet, we are still getting a very
> high atomic percentage of oxygen.
>
> Any suggestion, idea will be great.
>
> thanks,
> Yassine,Ait El Aoud
> UML,MA
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