Hi Dan,

 I appreciate your inputs, and suggestions.

"The only other source of oxygen is your "IO" sputter target.  Although I
have no experience sputtering this alloy, I suspect that the oxygen in
the "IO" target is sputtered at a greater rate (maybe 4X faster) than
the other element.  Thus, the resulting film on your samples is oxygen
rich."----------- The IO- target is pretty new , but I am wondering if it is
so why I am not getting a very high atomic percentage for In ( Induim).

Do you know  if  the distance target-substrate can also play a rule in this
case?

Thanks again and a wonderful weekend,

Yassine, Ait El Aoud

Yassine, Ait EL Aoud


On Wed, Jan 26, 2011 at 5:37 PM, Ruiz, Marcos Daniel (SENCOE) <
Dan.Ruiz@honeywell.com> wrote:

> Thanks for the clear replies to my questions.  Based on your answers, it
> is safe to say that you are doing a good job of eliminating oxygen and
> moisture from the chamber before deposition.
>
> The only other source of oxygen is your "IO" sputter target.  Although I
> have no experience sputtering this alloy, I suspect that the oxygen in
> the "IO" target is sputtered at a greater rate (maybe 4X faster) than
> the other element.  Thus, the resulting film on your samples is oxygen
> rich.
>
> This supports the advice you've already received about getting a new
> target.  I think the other piece of advice you got about wafer
> temperature probably serves to keep free oxygen out of the solid phase.
>
> Your sputter target vendor would probably be a good resource here.  They
> may be able to tell you what target you need to buy (percent oxygen) to
> achieve the oxygen level you require in your samples.
>
> Dan Ruiz