Hi,

Using hot H3PO4 is complicated since you will need a condenser and etc,
1 % HF etches SiN at about 600 A/min, you can reduce or increase the rate by
changing concentration.

Regards

Ozgur Celik


> Date: Thu, 24 Mar 2011 10:53:41 +0530
> From: kkjain2002@gmail.com
> To: mems-talk@memsnet.org
> Subject: [mems-talk] Etching of SiN
>
> What is the optimum concentration of SiN etchant ? The thickness is of
> the order of 1000 A.