I plan on using S-1813 positive resist as a mask. The gases that I have
available are SF6, CF4, O2, and H2.  Which one of these would you recommend,
if any?

Thanks,
Tony

On Thu, Mar 24, 2011 at 9:50 PM, Robert Ditizio  wrote:

> You need high bias power.  BCl3 helps if you've got it.  Dry etching is
> mostly physical with a minor chemical component.  Etch rates will be a few
> hundred angstroms/min, best case.  You don't mention if you require
> selectivity to a mask or if you have a mask present.  For stopping on the
> alumina, some CF4 or other source of fluorine will help.
>
> Robert

Tony Price
RF Microsystems Research Group

University of South Florida
4202 E. Fowler Avenue, ENB-118,
Tampa, FL, 33620
Office: ENB 412
Phone: (404) 291-3506