Thanks Robert.  Have you patterned BST using RIE before?  If so, can you
share your recipe with me so that I will have a starting point (i.e. RF
power, biasing power, gas flow rates, pressure, etc.)?

Tony

On Fri, Mar 25, 2011 at 9:44 PM, Robert Ditizio  wrote:

> Tony:
>
> You will want to avoid oxygen since any oxygen will slow the BST etch rate
> and also increase PR loss.   Your best bet is probably the CF4.  The SF6 is
> likely to have lower selectivity to the mask than the CF4 and the
> consumption of fluorine is likely to be low so the difference in BST etch
> rate is likely to be small.  The hydrogen could help.
>
> Robert
>
> On Mar 25, 2011 2:45 PM, "Tony Price"  wrote:
> > I plan on using S-1813 positive resist as a mask. The gases that I have
> > available are SF6, CF4, O2, and H2. Which one of these would you
> recommend,
> > if any?
> >
> > Thanks,
> > Tony

Tony Price
RF Microsystems Research Group

University of South Florida
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