Dear All,

I'm trying to etch a SiO2 film using RIE (SF6, CHF3, CF4, O2 are available)
using a SiN film as mask. Does anybody how if it is possible, and how? I've
seen that SiN films are etched much quicker than SiO2 in SF6 and O2 plasma.
Also, does anyone have experience with etching (dry or wet) TiN films?

Thank

Gustavo Rehder