SiO RIE
Pressure: 250 mTorr
ICP: 250 W
RIE: 100 W
CF4: 30sccm
Rate: 285sec to etch 320nm PECVD Oxide

no oxygen or SF6
etch rate of SiO is higher than SiN but i don't have info on selectivity

===================================
Salam R. Gabran, MASc.
Research associate, PhD. Candidate
Center for Integrated RF Engineering
(CIRFE Lab)
ECE Dept., University of Waterloo,
200 University Avenue West
Waterloo, Ontario, N2L3G1
cell.: 519-729-8066
Web: www.ece.uwaterloo.ca/~sgabran