Hi Jaroslaw,

Since I use the same process with the same results both on Si/SiOx (just
resist) and Saphirre Wafers (7nm Al on top), the influence seems to be very
small. For my structures, beam focus and development seem to have a much
larger influence on the outcome, but bear in mind that this is for very
small structures ( 150 micron writefield, rectangles about 50 microns long
and 1 micron wide, connecting "bow ties" with a 50 nm long single pixel line
in the middle). If you need more info, just send me an email :-)

Best,

Gabriel

Gabriel Puebla-Hellmann
ETH Zuerich
Laboratory for Solid State Physics
Quantum Device Lab
HPF D12
Schafmattstr.  16
8093 Zurich
Switzerland

Tel: +41 44 633 71 24

www.qudev.ethz.ch

-----Original Message-----
From: mems-talk-bounces+gabriepu=phys.ethz.ch@memsnet.org
[mailto:mems-talk-bounces+gabriepu=phys.ethz.ch@memsnet.org] On Behalf Of
Jaroslaw Syzdek
Sent: Monday, August 15, 2011 9:31 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] E-beam evaporate metal onto PMMA

Another PMMA question, that is more general in nature - when I e-beam
evaporate metal onto my PMMA resist - how much does it affect its
sensitivity for e-beam writing? during e-beam evaporation there's a lot of
electrons and x-rays in the chamber. I don't know how severe that is and how
much it affects the dosage during writing...

thanks in advance for any info on that.

Jaroslaw Syzdek