I've stripped off thin Au/Cr before with argon in an ion mill at 500 V and ~1
mA/cm2. You should be able to get something similar with a parallel-plate plasma
setup. I'd start with high power, which yields a high voltage. Also, use a low
argon pressure (say 2 mTorr), which makes the voltage higher and the current
lower for a constant power.

   --Kirt Williams

-----Original Message-----
From: mems-talk-bounces+kirt_williams=sbcglobal.net@memsnet.org [mailto:mems-
talk-bounces+kirt_williams=sbcglobal.net@memsnet.org] On Behalf Of Yingtao Tian
Sent: Wednesday, October 12, 2011 1:49 PM
To: 志修 梁; General MEMSdiscussion
Subject: Re: [mems-talk] Recipe of Ar plasma etching gold

Hi,

Thank you guys for replying. Actually, when I asked 'etching', I did mean the
plasma sputter off material. Because I have other components on some area of the
wafer, the wet etching process can damage my components. So, I am thinking an
inert Ar plasma may be better choice to remove the 100nm Au and Cr.

If any of you could give me something to start with, then I may be able to work
out my own parameters more quickly.

Thanks again.

Yingtao