What you need is a wafer bonding tool, which can easily produce these
range of forces and temperatures. Also, bonding in vacuum may be
necessary to eliminate trapped air at the interface. I have one of
these in my lab if you need further information.


On Mon, Jan 16, 2012 at 1:42 PM, Ankita Verma  wrote:
> Hi Everyone,
>
> I would like to ask for some help regarding wafer bonding using Au-Au thin
> films.
>
> I have read many papers and know that plasma pretreatment will help in
> bonding wafers at lower temperatures (around 200 C). Though what my problem
> is that most of the papers that I have read state that the amount of
> pressure they used to bond these wafers using Au films was around 1-10MPa..
> This does not make sense for me as I do not have a flip chip bonder, and I
> am trying to bond wafers by just applying a weight on top of 2 wafers and
> then anneal them in a lab oven at 200 C.
>
> 1MPa = 145psi. For a 4 inch wafer it comes to 1822 pounds of weight
> required to bond them. This seems to be a lot of weight. I cannot bring so
> much weight to bond the wafers. Can anyone suggest a better way to try
> bonding the wafers?
>
> How can I try doing this experiment without having a flip chip bonder?
> Please help!!
>
> --
> Best Regards
> Ankita Verma