I am wondering if anyone has a good reference for the change in line widths with change in thin film thickness when performing wet chemical etching. If a thin film was essentially a shadow masked gradient from 0-1000Å over several inches, I would expect that in order to resolve a pattern across the whole thin film, that the CDs would vary quite a bit from end to end just based upon the thin film thickness (thinner should be narrower in general, thicker should be fatter in general). It should also depend on the density of the pattern as well, and whether a lot or a little bit of material is being removed around the line being left behind, and how much that effects the local concentration of the etchant. Just wondering if there is something out there from years past, I haven't been able to find any relevant papers with a bit of searching. Sincerely, Dave _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe: http://mail.mems-exchange.org/mailman/listinfo/mems-talk