Hi all,

I am looking for some RIE process to etch 50nm of Cr (e-beam evaporation
process) with 300nm of PMMA as a mask (after an E-Beam lithography with
patterns with 200nm of resolution).
I'm trying the process:
40 sccm Cl2+2sccm O2 with 200mT and 50W, but the etch rate of Cr is
about 8nm/min.
Do you know some different process to increase the etch rate and the
selectivity?

Best regards,
--

*JUDITH NOEMÍ LINACERO BLANCO*

*Plataforma de Nanotecnologia*

Parc Científic de Barcelona

c/ Baldiri Reixac 10-12

08028 Barcelona, Spain

*Tel.*       +34 934037138

*Fax.*      +34 934037109

jlinacero@pcb.ub.cat 

http://www.pcb.ub.es/plataforma/nanotecnologia

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