Hi,

I am looking for a high-contrast, high-resolution photoresist to use for
interference lithography.  Our source is a HeCd laser operating at the
442 nm line.  Ultimately, we would like to use the resist as an etch
mask, so resistance to fluorine-based chemistry would be beneficial but
isn't strictly necessary.

I have been working with ma-p 1205 but I have difficulty getting steep
sidewalls.  I have gotten some good prints using a diluted SPR 220 in
the past, but I have had difficulty getting consistent dilutions so I
would prefer a commercial pre-mixed product.

As I understand it, the high-resolution requirement requires a low
viscosity resist that will produce a thin layer when spin coated. (Since
we are doing an interference lithography we don't have depth of focus
issues, but there's still a limit on the aspect ratio for the lines that
limits the resist thickness to less than a micron.)

To summarize, I'm looking for a photoresist that has the following
properties:
1) Sensitive at 442 nm (g-line resists seem fine)
2) Low viscosity; film thickness less than 1 micron
3) High contrast (large change in development rate when exposed)

Can anyone recommend a suitable product for this?

Justin

--
Justin M. Hannigan, Ph.D.
Process Development Engineer
LightSmyth Technologies,Inc.
875 Wilson St, Unit C
Eugene, OR 97402
Tel: 541-431-0026
www.lightsmyth.com


!DSPAM:50f5999e205381938014717!


_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk