Heavy boron doping of Si epitaxial layers creates an etch resistant
material, but it is under severe stress due to the difference in size of
the Si and B atoms.  This stress can be eliminated by co-doping with Ge.

I would like to learn the recipe for creating such low-stress Si epi
layers co-doped with B and Ge.  Could someone please direct me to a
reference (book or paper) which describes the experimental procedure to
achieve such an epi layer using an atmospheric pressure CVD system?

Thank you
--
Richard Koba
Arlington, MA