durusmail: mems-talk: Recipe for etching Ti using RIE
Recipe for etching Ti using RIE
2013-04-18
Recipe for etching Ti using RIE
Gabriel Puebla-Hellmann
2013-04-18
Hi,

We have a recipe for etching Niobium, which also etches Ti. We have an
Oxford Plasma Lab, params are 20 sccm SF6, 10 sccm Ar, pressure is 22
microbar, RF power is 100 W. Since I etching Ti films of 10-15 nm, the etch
rates varied, I guess the Ti oxides and also reacts with the substrate (Low
temp PECVD), but where roughly between .3 and .9 nm/s. As far as I know,
this etches Al2O3 very, very slowly ( we etch Nb on Sapphire, which is even
more resistant). Furthermore, SF6 does'nt attack aluminium, I've seen it
used to release Al structures (Konrad Lehnerts group at NIST in Boulder do
this, If I remember correctly, there is a paper describing their process),
so I guess you will get a little bit of physical etching from the argon, but
will otherwise be fine.
Best,
Gabriel

**************************************************************
Dr. Gabriel Puebla-Hellmann
ETH Zuerich
Laboratory for Solid State Physics
Quantum Device Lab
HPF D5
Schafmattstr.  16
8093 Zurich
Switzerland

Tel: +41 44 633 71 24

www.qudev.ethz.ch
**************************************************************


-----Original Message-----
From: mems-talk-bounces+gabriepu=phys.ethz.ch@memsnet.org
[mailto:mems-talk-bounces+gabriepu=phys.ethz.ch@memsnet.org] On Behalf Of
Xiaoning Wang
Sent: Wednesday, April 17, 2013 5:49 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] Recipe for etching Ti using RIE

Hello MEMS,

I'm trying to use aluminum oxide as etching mask to etch titanium underneath
using RIE. The gases available are Cl2, CF4, CHF3, SF6, CBrF3, CH4, He, H2,
Ar, O2, and N2. The Al2O3 layer is ~400nm thick and has ~80nm holes, and Ti
layer is ~150nm.

I don't care if the Al2O3 will be all etched, but I do want to transfer the
pattern to Ti. Is that possible using RIE? What recipe should I use? I
imagine should be something with high RF power and low chamber pressure.
But since we only have Cl2 gas for chlorine based etching, does anyone know
what gases and flow rates should I use?

Any advice is greatly appreciated! Thank you so much!

Best regards,
--
Xiaoning Wang (Travis)
PhD Candidate
Mechanical Engineering
Boston University
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