Jenn: After DRIE, your Al mask will have a C4F8 coating that is preventing it from getting etched. I use a 'Piranha Clean' to remove both the C4F8 and Aluminum post DRIE. Shivalik > Date: Sun, 5 May 2013 14:59:34 +0900 > From: hjrhee00@gmail.com > To: mems-talk@memsnet.org > Subject: [mems-talk] Remove aluminum mask after DRIE > > I'm trying to remove the aluminum layer (5000A, sputtered) that was used as > a hard mask for DRIE for structure release and having difficulty removing > it completely using the Al etchant (Al-12S). There are residues left on > the surface (SiO2) that look like small grains, even after leaving the > wafer on the ethant (more than 1 hr). After a short-dip on BOE (~30s) and > putting in the etchant, the residues are reduced but still not completely > clean. > > Anyone has an idea to completely remove these residues or has the same > experience? I don't quite understand why BOE helepd since shouldn't > aluminum oxide be only on the surface, not throughout the Al thin-film? > > Thanks!!! > -Jenn > _______________________________________________ > Hosted by the MEMS and Nanotechnology Exchange, the country's leading > provider of MEMS and Nanotechnology design and fabrication services. > Visit us at http://www.mems-exchange.org > > Want to advertise to this community? See http://www.memsnet.org > > To unsubscribe: > http://mail.mems-exchange.org/mailman/listinfo/mems-talk _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe: http://mail.mems-exchange.org/mailman/listinfo/mems-talk