Ahmad, That depends a lot on your process. I would recommend putting some resist down with your pattern on a test wafer and etching for some amount of time. Pick something less than your total etch, but not too short. Measure the thickness of the resist before and after and then you can calculate whether the thickness will be sufficient. Be careful to account for any etching into the substrate if you are using a profilometer to measure the thickness. If your recipe has a lot of oxygen, the rate against the resist will likely be very high. -Lou > Date: Wed, 8 May 2013 16:29:49 -0400 > From: ahaider3@gatech.edu > To: mems-talk@memsnet.org > Subject: [mems-talk] Resist thickness for nitride etch > > Hi > > I am trying to do an anisotropic etch of 400 nm nitride layer in a RIE machine. A portion of the nitride is protected by a resist layer on top of it. Can you tell approximate how much thickness of resist would I need so that the resist doesn't get stripped off during the nitride etch? > > Thanks, > Ahmad > > _______________________________________________ > Hosted by the MEMS and Nanotechnology Exchange, the country's leading > provider of MEMS and Nanotechnology design and fabrication services. > Visit us at http://www.mems-exchange.org > > Want to advertise to this community? See http://www.memsnet.org > > To unsubscribe: > http://mail.mems-exchange.org/mailman/listinfo/mems-talk _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe: http://mail.mems-exchange.org/mailman/listinfo/mems-talk