It depends on how thick your nitride is, and what chemistry you are using.
I can get about a 1:1 etch selectivity between a positive hard baked resist
and LPCVD silicon nitride, using CF4/O2 in a pure RIE mode.


On Wed, May 8, 2013 at 4:29 PM, Haider, Ahmad M  wrote:

> Hi
>
> I am trying to do an anisotropic etch of 400 nm nitride layer in a RIE
> machine. A portion of the nitride is protected by a resist layer on top of
> it. Can you tell approximate how much thickness of resist would I need so
> that the resist doesn't get stripped off during the nitride etch?
>
> Thanks,
> Ahmad
>
> _______________________________________________
> Hosted by the MEMS and Nanotechnology Exchange, the country's leading
> provider of MEMS and Nanotechnology design and fabrication services.
> Visit us at http://www.mems-exchange.org
>
> Want to advertise to this community?  See http://www.memsnet.org
>
> To unsubscribe:
> http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>
_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

Want to advertise to this community?  See http://www.memsnet.org

To unsubscribe:
http://mail.mems-exchange.org/mailman/listinfo/mems-talk