Hi all, I am trying to etch a pattern on a device written on HSQ via E-beam. Currently, I am using KOH+IPA solution at 78 C as the etchant and the pattern disappears in few seconds.I am really confused why this occurs because I think HSQ interaction with electron beam produces amorphous SiO2. Please, have anybody done this. Thanks in advance for your responds Tony _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe: http://mail.mems-exchange.org/mailman/listinfo/mems-talk