Hi all,

I have done etching in Si using RIE to about 260 um. Now I need to pattern
comb structure at the bottom of the pit which I couldn’t achieve.  I took
measures to reduce the roughness using HNA and got reduced roughness less
than 100 nm. But comb lithography is still a problem. Is it a problem with
roughness or lithography? Can anyone suggest me how to form the comb
structure?



Malar
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