I did lithography in 300 um deep trenches by using steper (ASML MIS
mode)and it worked great. 260um may out of the range of focus offset. If
that is the case, you can manually control the machine to level the wafer
in the trenches.

Good luck.

Best,
Yonlgiang


On Thu, May 8, 2014 at 8:49 AM, Black, Robert  wrote:

> What kind of Lithography tool are you using. Can you put in a focus offset
> to focus at the bottom of the pit?
>
> Robert
>
> -----Original Message-----
> From: mems-talk-bounces+r-black1=ti.com@memsnet.org [mailto:
> mems-talk-bounces+r-black1=ti.com@memsnet.org] On Behalf Of Malar C
> Sent: Tuesday, May 06, 2014 6:23 AM
> To: mems-talk@memsnet.org
> Subject: [mems-talk] Comb Structure Lithography
>
> Hi all,
>
> I have done etching in Si using RIE to about 260 um. Now I need to pattern
> comb structure at the bottom of the pit which I couldn’t achieve.  I took
> measures to reduce the roughness using HNA and got reduced roughness less
> than 100 nm. But comb lithography is still a problem. Is it a problem with
> roughness or lithography? Can anyone suggest me how to form the comb
> structure?
>
>
>
> Malar
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