Hi Ryan,
    Not sure about relative powers of platen bias and ICP.  All of our recipes
have RIE (platen bias) lower than ICP.  That etch rate was without back side
cooling, though I bet you might get somewhat better anisotropy with it.

Cheers,
  Michael
________________________________________
From: mems-talk-bounces+michael.martin=louisville.edu@memsnet.org [mems-talk-
bounces+michael.martin=louisville.edu@memsnet.org] on behalf of Ryan
[ryan@exsior.co.kr]
Sent: Tuesday, May 20, 2014 4:35 AM
To: mems-talk@memsnet.org
Subject: Re: [mems-talk] Best recipe to etch sio2 using CHF3 gas with ULVAC
NE-550

Thanks Michael.



Otherwise, if source power is lower than bias, does it damage wafer or
interrupt uniformity and etch rate?

In addition, back side cooling (He) ??



Regards,



Ryan



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