Dear Mehmet, I am not sure about other resist but AZ5214E on glass and silicon wafers with not too old resist and appropriate lithography parameters should develop anywhere between 1 min to max 2 mins, depending on your feature resolution and density. 45 mins development of 1.5micron thick layer is absolutely weird. Are you soft baking at very high temp and long time ? How old is your resist? I have noticed a year old resist to start developing slowly but max 4 min or 5 mins. Considering you have fresh HMDS, AZ5214E resist and silicon wafer with MA5 mask aligner try following recipie - which has worked like a charm for me. Silicon wafer clean with normal clean procedure - Water,Acetone, Isopropanol rinse and N2 Dry. Pre-heat for dehydration - at around 90 deg for 5min or 150 deg 1-2 mins Let it cool down for few 10s of sec and then Spin HMDS at 3000rpm 30 sec Wait for 10-15 sec Spin AZ5214E resist at 3000rpm 30 sec, I believe this gives a film thickness of around 1.5 to 2 micron (not sure about exact thickness) Wait for 10-15 sec Soft - pre exposure bake at 90 deg for 60 sec on uniformly heated hotplate. Exposure using MA5 mask aligner 30 sec with proximity 0.7 to 1 micron or softcontact mode Develop in non-diluted developer AZ726MIF for 45sec to 60sec with very gentle stirring Or develop in water diluted AZ400 developer (4:1 ratio) for 1 min with very gentle stirring Rinse with DI water and dry under nitrogen stream. >From my experience image reversal resists and negative resists have relatively short life time of optimum process conditions, so check how old are your chemicals. Secondly, are you interested in using AZ5214E in positive tone mode or image reversal mode. In Image reversal mode process is entirely different and need fine optimization. >From your mail, I feel you are interested in using it as negative tone/image reversal instead of +ve tone, is it so? Good luck... and please update us when you resolve your problem because it is first time I heard of such weird length of development time. Good luck ysm -----Original Message----- From: mems-talk-bounces+ysminstru=gmail.com@memsnet.org [mailto:mems-talk-bounces+ysminstru=gmail.com@memsnet.org] On Behalf Of Mehmet Yilmaz Sent: Monday, September 21, 2015 11:25 AM To: General MEMS discussion Subject: [mems-talk] About difficulty in photoresist development (if using HMDS as adhesion layer) Dear mems-talk community, If I use HMDS as adhesion layer, I am having a problem with the development of a photoresist called AZ4562 (about 10 micron thickness). In addition, I am having the same development problem with AZ5214E (about 1.4 micron thickness). If I do not use HMDS, the development time is usually about 60 seconds, or even less. However, if I use HMDS, the development time goes up to 45 minutes (not seconds...) and still the development is not successful, but the resist is completely removed from some parts of the patterned areas on the wafer. Also, I have seen this problem with different substrates such as Silicon, Quartz, and Pyrex. I am wondering what would be the reason for that? Is it possible that HMDS is old, and out of date? Could that explain the problem? Or, do you have any other comments based on your own experience? Could you please comment? I am looking forward to your replies. Thanks in advance, Mehmet Mechanical Engineer _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe: http://mail.mems-exchange.org/mailman/listinfo/mems-talk _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe: http://mail.mems-exchange.org/mailman/listinfo/mems-talk