When I was ashing S1800 photoresist using Pure O2, I noticed the following: After 5 min, or 7min, the photoresist layer stayed the same. The layer is only 0.5um thick to begin with. But if I look at it after 10min, all PR is gone. Seems it is hard to find the middle point. Does the O2 plasma turn everything in ash first and then poof, everything is gone? I thought it etch layer by layer. Power is pretty low, 200W, 0.1-0.2torr. Pure O2, RF plasma. -Andy _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe: http://mail.mems-exchange.org/mailman/listinfo/mems-talk