Hi all,
I am using a magnetron sputtering system (Lesker). Could anyone
suggest process parameters for reactive sputtering of Al2O3 (Aluminum
Oxide) such as O2 flow, Ar  flow, deposition pressure, power,
frequency, off time, temperature etc...
Thank you in advance.
Best,

Seyed

Sent from my iPhone

> On Oct 2, 2017, at 7:43 PM, Wenting Guo  wrote:
>
> Dear ALL,
>
> I've currently met a problem related to the wet etch of GaAs/AlAs
> (6nm)/GaAs structure.
>
> We have ohmic contacts (Pd/Ge) on the top and the bottom GaAs layer
> annealed. They behave well with linear IV curve at room temperature and
> with giga ohms at the liquid nitrogen temperature if one contact is at the
> bottom while the other on the top.
>
> Then I wet etched (H2O:H2O2;H2SO4=80:8:1) around the ohmic contacts on the
> top down to the bottom GaAs while keeping the ohmic contact at the bottom
> untouched. Afterwards, I measured the resistance between the top contact
> and the bottom contact again. However, the result shows that they are short
> through the AlAs layer now.
>
> I tried different combinations of the Pd/Ge thickness (25/75 nm -> 25/15
> nm) and the annealing temperature from 350C to 200C. The same short appears
> again and again,
>
> Is that possible the wet etchant somehow damage the AlAs layer? I'm running
> out of ideas for the moment. Could anyone kindly give me some suggestions
> about this?
>
> Many thanks,
> Best wishes,
> Wenting
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