Martin,
     Maybe you need to anneal the silicon at high temperature to rebuild
     the crystals and activate the dopant.

     Michael Pedersen
     Knowles Electronics Inc.


______________________________ Reply Separator
_________________________________
Subject: Sputtering Silicon
Author:  "M. Pliete"  at -FABRIK/Internet
Date:    9/29/1999 9:58 AM


From: M. Pliete
Date: Wed, Sep 29, 1999 9:58 AM
Subject: Sputtering Silicon
To: MEMS
Dear collegues,

we are trying to sputter Si on a Si nitride membrane with our VARIAN
3180. The silicon target (B doped) has a conductivity / resistance of
1 Ohms cm. The thickness of Si we get is a something between 1-1.5
micrometers. But all the conductivity of the film depsoited has
gone.

Has anyone experience with this?
Is there a way to get around this problem?
Does anyone know that it does not work in principle?

Pressure in ther sputtering machine 4.5 mTorr
We tried different powers starting from 0.3kW to 1kW

Thank you for your comments.
Martin Pliete

m.pliete@pt.fh-gelsenkirchen.de
Martin Pliete
FH Gelsenkirchen
FB Physikalische Technik / Mikrosystemtechnik
Neidenburger Str. 43
Postfach: 45877 Gelsenkirchen
Hausanschrift: 45897 Gelsenkirchen
Phone: ++49 / 209/9596-406
Fax: ++49 / 209/9596-514
e-Mail: map@pt.fh-gelsenkirchen.de


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