--------------F659D1DEC16EBA7E016F7AB2 Content-Type: text/plain; charset=us-ascii Content-Transfer-Encoding: 7bit Hi, i have some problems and questionsabout SU-8 5 . I ask you to help me to understand what's the problem we have with our recipe. Take in mind that we want obtain a layer of 20 microns of SU-8 5 on a silicon substrate of 2" x 2" ! For the moment, this is the sequence we used: - prewarm the substrate at 250C for 10min - put the substrate in the spinner (wait for about 10 min to cool down) - fill siringe with SU8-5 as it is from the bottle (about 2cc) (already some small bubbles are visible) - spin primer at 850rpm for 15s - dip resist from the siring on the center of the substrate up to about 1cm. square (bubbles are still present) - push away bubbles from the center - spin resist at 850rpm for 15s, with slow acceleration (at this point of upper surface of the resist is already non uniform) (i.e. mirrored imaged have a "wave" effect) - bake subtrate on a hot plate at 60C for 2min (some more bubbles are created, some disappear) - bake at 90C for 5 min. At the end we are not sure we have got a good uniform deposition . It looks very thick and non uniform (we can not measure it for the moment), but most evident is the "waving" effect on mirrored images. The questions are: 1.Is there anything wrong woth our recipe? 2.Are we missing something? 3.what is the influence of substrate temperature on the photoresist deposition? In particular, after the warm of the substrate at 200 C , i must let it to return to ambient temperature and after depose the adhesion promoter or do it at a different temperature? 4.what is the importance of the adhesion promoter in the process? 5.what are the ideal temperature and times of each phase (deposition , pre bake, patterning,post bake, developing) of SU-8 5 process? Thanks of all -- Vanessa la Cecilia Centro Integrazione Microsistemi Parco Scientifico e Tecnologico d'Abruzzo Via Antica Arischia 1 67100 L'AQUILA ITALY --------------F659D1DEC16EBA7E016F7AB2 Content-Type: text/html; charset=us-ascii Content-Transfer-Encoding: 7bit
Hi, i have some problems and questionsabout SU-8 5 .
I ask you to help me to understand what's the problem we have with our recipe.
Take in mind that we want obtain a layer of 20 microns of SU-8 5 on a silicon substrate of 2" x 2" !For the moment, this is the sequence we used:
- prewarm the substrate at 250C for 10min
- put the substrate in the spinner (wait for about 10 min to cool down)
- fill siringe with SU8-5 as it is from the bottle (about 2cc)
(already some small bubbles are visible)
- spin primer at 850rpm for 15s
- dip resist from the siring on the center of the substrate up to about
1cm. square
(bubbles are still present)
- push away bubbles from the center
- spin resist at 850rpm for 15s, with slow acceleration
(at this point of upper surface of the resist is already non uniform)
(i.e. mirrored imaged have a "wave" effect)
- bake subtrate on a hot plate at 60C for 2min
(some more bubbles are created, some disappear)
- bake at 90C for 5 min.At the end we are not sure we have got a good uniform deposition .
It looks very thick and non uniform (we can not measure it for the
moment), but most evident is the "waving" effect on mirrored images.
The questions are:1.Is there anything wrong woth our recipe?
2.Are we missing something?
3.what is the influence of substrate temperature on the photoresist deposition?
In particular, after the warm of the substrate at 200 C , i must let it to return
to ambient temperature and after depose the adhesion promoter or do it at a different temperature?
4.what is the importance of the adhesion promoter in the process?
5.what are the ideal temperature and times of each phase (deposition , pre bake, patterning,post bake,
developing) of SU-8 5 process?Thanks of all
-- Vanessa la Cecilia Centro Integrazione Microsistemi Parco Scientifico e Tecnologico d'Abruzzo Via Antica Arischia 1 67100 L'AQUILA ITALY--------------F659D1DEC16EBA7E016F7AB2--