I am using either silicon dioxide or silicon nitride as a masking material
for an EDP etch. I plan to use EDP type"B" (ethylenediamine : pyrocatechol
: water ; 75ml : 12g : 25ml). My problem is I cannot find etch rate ratios
for the masking materials and the silicon<100>. I need to etch right
through a 380 micron wafer. Also, is type B EDP the best to minimize mask
under etch?
                        Thanks

PS. Thanks alot to those who helped with my Boron etch stop problem

Steve Forgrieve
Department of Electrical Engineering
The University of Edinburgh
King's Buildings
Mayfield Rd
Edinburgh EH9 3JL
(Int +44) 131 650 5665 (enquiries)
email: S.G.Forgrieve@ug.ee.ed.ac.uk