> Hello, mems.
> I want to know  etch rate of SiO2 etch rate using etchant Buffered HF (
> 6:1).(BOE)

800 to 1000 A per minutes depending on depth and aspect ratio, as per if
the reaction becomes diffusion limited.

> And I want to know that the etch rate of SiO2 using etchant KOH(20:80)
> H2O, too.
I can tell you that it is definitely lesser than 400 A /minute as I had
once determined the parameters but do not remember it. Refer to Runyan's
book "Principles of Micrfabrication", or to S.K.Ghandhi " VLSI fabrication
principles using GaAs and Si". The rate is largely dependent on
temperature but does not exceed 400 A/min under any circumstance for this
concentration ratio.





> Please let me know as soon as possible.
> Sincerely yours.

You are welcome
Good luck.
Amit Shiwalkar

>
>

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Amit Shiwalkar                         Dept. Of Bio-Medical Engineering.
3,Vasant,                              IIT Bombay.
Carter Road,                           Powai, Bombay-400076
Khar,
Bombay(Mumbai)-400052
INDIA.


                     Email: amits@cc.iitb.ernet.in

" Reality Is a Figment of IMAGINATION "
                                ----------- Amit Shiwalkar

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