John,

I have read the reply you have posted to mems@isi.edu on
ohmic contact to Ge.

I have the following additional comment/question on that subject:

Comment: Au on Ge should make Schottky (rectifying-non-ohmic) contact on
         moderatly doped Ge. The literature gives the following
         Schottky barrier heights (From Sze'book): 0.59 eV on n-type Ge
         and 0.30 on p-type Ge.

Question: When you mention the contact you made with Au onto a
          single cristal Ge: what was the doping ? Did you observe
          any rectifying (diode) effect ?


Thanks

Best regards


Emmanuel Dubois


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