In RCA, wafer cleaning process, there is a solution of H2O2 + NH3. It is the
best choice for Ag etching (at room temperature).

            Zhen  YANG, Ph.D.
            Surface & Interface Technology Division
            Department of Manufacturing Systems
            Mechanical Engineering Laboratory
            Namiki 1-2,  Tsukuba
            JAPAN  305-8564

            TEL: +81-298-58 7209
            FAX: +81-298-58 7167